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Time-resolved photoluminescence study of InSe

โœ Scribed by J.L. Brebner; T. Steiner; M.L.W. Thewalt

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
217 KB
Volume
56
Category
Article
ISSN
0038-1098

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โœฆ Synopsis

Tlme-resolved photolumlneseence spectra of InSe at superfluld He temperatures show that one broad lumlnesoence feature centred at 1315meV is due to donor-acceptor pair recombination whereas other, /ower energy broad bands are not. The sharp lines around 1333meV were identified as bound exclton luminescence from their transient behavlour.

๐Ÿ“œ SIMILAR VOLUMES

Time-resolved photoluminescence study of
Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices
โœ P. Tronc; G. Wang; B. Reid; R. Maciejko; J.C. Harmand; J.F. Palmier; B. Sermage; ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 99 KB

We present results of time-resolved photoluminescence experiments performed at 77 K on a GaInAs/AlGaInAs superlattice grown by molecular beam epitaxy and lattice matched to an InP substrate. The superlattice is the intrinsic part of a p-i-n diode. Photoluminescence spectra, reconstructed at various