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Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

✍ Scribed by Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

Book ID
122248293
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
660 KB
Volume
557
Category
Article
ISSN
0040-6090

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Electrical properties of N atomic layer
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t