Phonon Raman scattering in GaAs-based quantum dots
β Scribed by P.D. Wang; C.M.Sotomayor Torres
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 380 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0038-1098
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We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic
Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy level