Interface phonons in GaAs/AlAs quantum dots
β Scribed by R.M. de la Cruz
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 276 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
We use micro-Raman scattering to study the interface (IF) optical phonon in a CdSe self-assembled quantum dot structure. Spatially resolved micro-Raman scattering data obtained from a cleaved edge of a sample shows that the IF phonon is localized at the CdSe dot layer. The intensity of the Raman sca
In semiconductor microstructures with many layers, the phonon modes change from their bulk form and split into 'confined LO phonons' (LC) and 'interface phonons' (IF), the number and variety of which depends on both the number of layers and the number of different materials in the structure. This af
Suppressed relaxation in strongly confined InGaAs/GaAs quantum dots (QDs) was investigated by resonantly excited time-resolved photoluminescence spectroscopy. Hot exciton recombination and temperature-dependent relaxation are demonstrated supporting multi-phonon processes to dominate the relaxation