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Electron relaxation by interface phonon modes in quantum dots

โœ Scribed by R.M. de la Cruz


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
205 KB
Volume
16
Category
Article
ISSN
0749-6036

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We use micro-Raman scattering to study the interface (IF) optical phonon in a CdSe self-assembled quantum dot structure. Spatially resolved micro-Raman scattering data obtained from a cleaved edge of a sample shows that the IF phonon is localized at the CdSe dot layer. The intensity of the Raman sca