Raman scattering from confined phonons i
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B.H. Bairamov; A. Aydinli; B. Tanatar; K. GΓΌven; S. Gurevich; B. Ya. Mel'tser; S
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Article
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1998
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Elsevier Science
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English
β 84 KB
We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic