✦ LIBER ✦

Two-phonon Raman scattering in GaAs

✍ Scribed by Tomoyuki Sekine; Kunimitsu Uchinokura; Etsuyuki Matsuura

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 638 KB
Volume: 38
Category: Article
ISSN: 0022-3697
DOI: 10.1016/0022-3697(77)90216-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Raman scattering by two LO-phonons near

Raman scattering by two LO-phonons near Γ in GaAs

✍ Diego Olego; Manuel Cardona 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 440 KB

Two-phonon Raman scattering in GaSb

✍ T. Sekine; K. Uchinokura; E. Matsuura 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 276 KB

Two-phonon Raman scattering in InP

✍ E.T.M. Kernohan; R.T. Phillips 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 611 KB

Phonon Raman scattering in GaAs-based qu

Phonon Raman scattering in GaAs-based quantum dots

✍ P.D. Wang; C.M.Sotomayor Torres 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 380 KB

Triple-resonant two-phonon Raman scatter

Triple-resonant two-phonon Raman scattering in graphene

✍ I. Kupčić 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB

Raman scattering from confined phonons i

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

✍ B.H. Bairamov; A. Aydinli; B. Tanatar; K. Güven; S. Gurevich; B. Ya. Mel'tser; S 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 84 KB

We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic