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Raman Scattering in GaN/AlN Quantum Dot Structures

✍ Scribed by J. Gleize; F. Demangeot; F. Frandon; M.A. Renucci; M. Kuball; F. Widmann; B. Daudin


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
153 KB
Volume
216
Category
Article
ISSN
0370-1972

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In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the