Well-width dependence of interface rough
Well-width dependence of interface roughness scattering in GaAs/Ga1 − xAlxAs quantum wells
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N. Balkan; R. Gupta; M. Cankurtaran; H. Çelik; A. Bayrakli; E. Tiras; M.Ç Arikan
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Article
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1997
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Elsevier Science
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English
⚖ 116 KB
Well-width dependence of quantum and transport mobilities of electrons in GaAs/GaAlAs multiple quantum wells is studied for wells with widths ranging between 50 Å and 145 Å. Experimental results are obtained from the amplitude analysis of the Shubnikov-de Haas (SdH) oscillations and from conventiona