𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Peculiarities of Silicon Carbide Crystal Growth in Quasiclosed Volume

✍ Scribed by Dr. S. K. Lilov

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
309 KB
Volume
28
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.

✦ Synopsis

On the basis of the accomplished investigation is has been shown that in the known schemes for growing of Sic epitaxial layers from the gas phase in quasiclosed volume it takes place an excretion of the redundant silicon upon the front of crystallization, its accumulation in the gas phase up to the state of the saturation and its deposition upon the growing surface as drops. In this case the growth of the epitaxial layer takes place by the vapour-liquid-solid (VLS) mechanism.

πŸ“œ SIMILAR VOLUMES

Investigation of the thermal conditions
Investigation of the thermal conditions during silicon carbide crystal growth
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 322 KB πŸ‘ 1 views

In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra

Study of the evaporation mechanism in si
Study of the evaporation mechanism in silicon carbide crystals growth from vapour phase
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 252 KB πŸ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place

Investigation of the role of crystal gro
Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 330 KB πŸ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys