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p-i-n junction in the anodic oxide film of tantalum

✍ Scribed by Y. Sasaki

Publisher
Elsevier Science
Year
1960
Tongue
English
Weight
882 KB
Volume
13
Category
Article
ISSN
0022-3697

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πŸ“œ SIMILAR VOLUMES

Anodic oxide films on titanium formed in
Anodic oxide films on titanium formed in molten salt electrolytesβ€”I. Estimation of p-i-n junction in the film
✍ K. Hirata; H. Yoneyama; H. Tamura πŸ“‚ Article πŸ“… 1972 πŸ› Elsevier Science 🌐 English βš– 782 KB

Titanium was oxidized anodically in molten sodium nitrite, and sodium nitrite containing 1 mol-% sodium peroxide, at constant cd at 315Β°C. The anodic oxide film showed rectitication, and photocurrent and photovoltage. From these results and the measurements of capacitance of the film, the flhn is pr

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## Ahstract -After heating the anodic oxide tilm on tantalum, a constant current or voltage was applied to the specimen in a diluted phosphoric acid solution. and the transient behaviour was examined according to the Frcnkel defect model. Interstitial ions taking part in ionic conduction are captu

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Almbxct -The mobility of phosphorus incorporated as a mass marker into tantalum anodic oxide films was investigetcd by mtans of ion microprobe mass analysis. If the transport number of tantalum ions for the film formation is ~ssumcd to be CotMant regardless of the oxidation current density chosen, t

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✍ P.H.G Draper; J Harvey πŸ“‚ Article πŸ“… 1963 πŸ› Elsevier Science βš– 999 KB

It has been shown previously that the kinetics of anodic film growth on Ta, Nb and Zr often depend strongly on the nature of the electrolyte. This work is an attempt to resolve this anomaly and the inconsistencies in the reported structures of the oxide layers. Electron diffraction showed the anodic