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Migration of incorporated phosphorus in the anodic oxide film formation of tantalum

โœ Scribed by Fumihiro Arifuku; Hiroshi Yoneyama; Hideo Tamura

Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
337 KB
Volume
24
Category
Article
ISSN
0013-4686

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โœฆ Synopsis

Almbxct -The mobility of phosphorus incorporated as a mass marker into tantalum anodic oxide films was investigetcd by mtans of ion microprobe mass analysis. If the transport number of tantalum ions for the film formation is ~ssumcd to be CotMant regardless of the oxidation current density chosen, then conclusions are drawn that the incorporated phosphorus is m&k, and that the m&ration rate of it is h&h for a high oxidation current density. The apparent dqraa of m@ration of the inomporatcd phosphorus *ss evaluated as a function of the current density for the anodization. on the assumption that the transport number of tantalum ions was 0.243. INTR0DUcr10N

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