Film-formation oxygen yield in the anodic oxidation of niobium
β Scribed by C. Cherki
- Publisher
- Elsevier Science
- Year
- 1971
- Tongue
- English
- Weight
- 723 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0013-4686
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π SIMILAR VOLUMES
Almbxct -The mobility of phosphorus incorporated as a mass marker into tantalum anodic oxide films was investigetcd by mtans of ion microprobe mass analysis. If the transport number of tantalum ions for the film formation is ~ssumcd to be CotMant regardless of the oxidation current density chosen, t
The anodic films formed on tantalum in many non-aqueous solutions have been found to consist of two layers. Next to the metal there is a layer of Ta206 with the same characteristics as that of films formed in aqueous electrolytes, while between the TaeOb film and the solution there is a layer which
It has been shown previously that the kinetics of anodic film growth on Ta, Nb and Zr often depend strongly on the nature of the electrolyte. This work is an attempt to resolve this anomaly and the inconsistencies in the reported structures of the oxide layers. Electron diffraction showed the anodic
## Fluoride ion used either in the surface preparation or in the subsequent anodising of zirconium has a profound effect upon the stresses in the zirconium oxide anodic layer. By a suitable choice of surface preparation, anodising electrolyte, and growth rate, anodic oxide films can be grown on th