Almbxct -The mobility of phosphorus incorporated as a mass marker into tantalum anodic oxide films was investigetcd by mtans of ion microprobe mass analysis. If the transport number of tantalum ions for the film formation is ~ssumcd to be CotMant regardless of the oxidation current density chosen, t
The behavior of incorporated impurities in tantalum anodic oxide films at the dielectric breakdown
β Scribed by Fumihiro Arifuku; Hiroshi Yoneyama; Hideo Tamura
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 334 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0013-4686
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π SIMILAR VOLUMES
The anodic films formed on tantalum in many non-aqueous solutions have been found to consist of two layers. Next to the metal there is a layer of Ta206 with the same characteristics as that of films formed in aqueous electrolytes, while between the TaeOb film and the solution there is a layer which
The rates of growth of anodic oxide films at PI m acid and alkahna solutions and Ni III alkaline solutibns are compared. In acid solutions, the rates are pH independent. In alkaline solutions. they are affected by pH. The exchange current densities, i,, in alkaline solutions increase one decade as p
The growth kinetics of thin anodic oxide films at nickel electrodes are examined in 0.1 N KOH solutions at room temperature under potentiodynamic and galvanostatic conditions. At electrodes that have been mechanically polished and cathodically reduced, growth ofthe lower oxidation state phase, fi-Ni