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Oxygen precipitates and the formation of thermal donors in silicon

โœ Scribed by N. V. Vabishchevich; D. I. Brinkevich; V. S. Prosolovich

Book ID
110119833
Publisher
Springer
Year
1998
Tongue
English
Weight
52 KB
Volume
32
Category
Article
ISSN
1063-7826

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For (~ochralski-grown silicon, oxygen is the basic impurity, with its concentration exceeding IO Is cm-~. The complexing of oxygen upon heat treatment presents a long-standing challenge to our understanding of the physics of defects in silicon. In this paper the oxygen-related centres generated by l