Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?
✍ Scribed by U. Gösele; K. -Y. Ahn; B. P. R. Marioton; T. Y. Tan; S. -T. Lee
- Publisher
- Springer
- Year
- 1989
- Tongue
- English
- Weight
- 894 KB
- Volume
- 48
- Category
- Article
- ISSN
- 1432-0630
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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno
For (~ochralski-grown silicon, oxygen is the basic impurity, with its concentration exceeding IO Is cm-~. The complexing of oxygen upon heat treatment presents a long-standing challenge to our understanding of the physics of defects in silicon. In this paper the oxygen-related centres generated by l