Thermal donors and carbonoxygen defects in silicon
✍ Scribed by Lindström, J. L. ;Weman, H. ;Oehrlein, G. S.
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 695 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0031-8965
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For (~ochralski-grown silicon, oxygen is the basic impurity, with its concentration exceeding IO Is cm-~. The complexing of oxygen upon heat treatment presents a long-standing challenge to our understanding of the physics of defects in silicon. In this paper the oxygen-related centres generated by l
## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno