Formation of oxygen precipitates in silicon
β Scribed by I. V. Antonova; V. P. Popov; S. S. Shaimeev; A. Misiuk
- Book ID
- 110119651
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 83 KB
- Volume
- 31
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this paper, the effect of annealing atmosphere on oxygen precipitation and formation of denuded zone (DZ) in Czochralski (CZ) silicon has been investigated. It was revealed that the highβtemperature annealings in various atmospheres resulted in almost identical oxygen outdiffusion le
## Abstract The formation of an oxygen precipitate denuded zone in nitrogenβdoped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit