Oxidation of N+ implanted silicon: optical and structural properties
β Scribed by T. Chevolleau; A. Szekeres; S. Alexandrova
- Book ID
- 108422999
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 113 KB
- Volume
- 151-152
- Category
- Article
- ISSN
- 0257-8972
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## Abstract We compare optical and structural properties of siliconβrich silicon oxide (SiO~__x__~, __x__βΌ1.8) films obtained by ion implantation and molecular beam deposition (MBD). Before annealing, amorphous clusters (β₯2βnm) are present in the MBD samples whereas these are absent for ion implant
The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing