Optical and structural properties of silicon-rich silicon oxide films: Comparison of ion implantation and molecular beam deposition methods

✍ Scribed by Nikitin, Timur ;Aitola, Kerttu ;Novikov, Sergei ;Räsänen, Markku ;Velagapudi, Rama ;Sainio, Jani ;Lahtinen, Jouko ;Mizohata, Kenichiro ;Ahlgren, Tommy ;Khriachtchev, Leonid

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 365 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127028

✦ Synopsis

Abstract

We compare optical and structural properties of silicon‐rich silicon oxide (SiO~x~, x∼1.8) films obtained by ion implantation and molecular beam deposition (MBD). Before annealing, amorphous clusters (≥2 nm) are present in the MBD samples whereas these are absent for ion implantation, and the absorption at 488 nm is much stronger for MBD. Upon annealing, the absorption coefficient increases for the implanted material but the opposite change occurs for MBD. For both preparation methods, annealing at ∼1100 °C produces silicon nanocrystals (Si‐nc) and enhances the 1.5‐eV photoluminescence (PL) whereas annealing at 1200 °C decreases the PL, especially for the implanted sample. The Si–SiO~2~ phase separation is not complete even after annealing at 1200 °C.