Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation
β Scribed by N. N. Gerasimenko; T. I. Kovalevskaya; V. G. Pan'kin; K. K. Svitashev; G. M. Tseitlin
- Publisher
- Springer US
- Year
- 1977
- Tongue
- English
- Weight
- 202 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0021-9037
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Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect
## Abstract We compare optical and structural properties of siliconβrich silicon oxide (SiO~__x__~, __x__βΌ1.8) films obtained by ion implantation and molecular beam deposition (MBD). Before annealing, amorphous clusters (β₯2βnm) are present in the MBD samples whereas these are absent for ion implant