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Epitaxial growth of silicon on silicon implanted with iron ions and optical properties of resulting structures

✍ Scribed by G. G. Galkin; D. L. Goroshko; E. A. Chusovitin; V. O. Polyarnyi; R. M. Bayazitov; R. I. Batalov

Book ID: 111448156
Publisher: Springer
Year: 2008
Tongue: English
Weight: 443 KB
Volume: 53
Category: Article
ISSN: 1063-7842
DOI: 10.1134/s1063784208020126

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## Abstract We compare optical and structural properties of silicon‐rich silicon oxide (SiO~__x__~, __x__∼1.8) films obtained by ion implantation and molecular beam deposition (MBD). Before annealing, amorphous clusters (≥2 nm) are present in the MBD samples whereas these are absent for ion implant