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Origins and characterization of low-frequency noise in GaAs MESFET's grown on InP substrates

✍ Scribed by Chertouk, M.; Chovet, A.


Book ID
114536356
Publisher
IEEE
Year
1996
Tongue
English
Weight
685 KB
Volume
43
Category
Article
ISSN
0018-9383

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A comparison of the low frequency noise
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The influence of MBE growth conditions on the low frequency noise features of 1:8 mm thick layers of InSb is examined. Low Hooge factors down to 2 Γ‚ 10 Γ€ 5 , which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The tempe