𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy

✍ Scribed by M.K. Lee; K.C. Huang; D.S. Wuu; H.H. Tung; K.Y. Yu


Book ID
107790174
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
282 KB
Volume
93
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Selective Growth of Cubic GaN on Pattern
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 180 KB πŸ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl