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Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy

✍ Scribed by G. Nataf; M. Leroux; S.M. Laügt; P. Gibart

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 535 KB
Volume: 165
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(96)00172-8

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