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Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxy

✍ Scribed by Y. Kunitsugu; I. Suemune; Y. Tanaka; Y. Kan; M. Yamanishi

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 390 KB
Volume: 95
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(89)90358-8

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