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Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves

✍ Scribed by Michel J. Anders; M.M.G. Bongers; P.L. Bastos; L.J. Giling


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
715 KB
Volume
154
Category
Article
ISSN
0022-0248

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