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Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates

โœ Scribed by Ishwara Bhat; Ruichao Zhang

Publisher
Springer US
Year
2006
Tongue
English
Weight
378 KB
Volume
35
Category
Article
ISSN
0361-5235

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Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl