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Vapor phase epitaxy of CdTe on sapphire and GaAs

✍ Scribed by Masanobu Kasuga; Hiroyuki Futami; Yoshihiro Iba


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
413 KB
Volume
115
Category
Article
ISSN
0022-0248

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Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZn