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Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-grown HFETs

โœ Scribed by Sakalas, P; Nawaz, M; Zirath, H


Book ID
121218807
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
302 KB
Volume
15
Category
Article
ISSN
0268-1242

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A comparison of the low frequency noise
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The influence of MBE growth conditions on the low frequency noise features of 1:8 mm thick layers of InSb is examined. Low Hooge factors down to 2 ร‚ 10 ร€ 5 , which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The tempe