A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE

✍ Scribed by Julia Dobbert; Lien Tran; Fariba Hatami; Vasyl P. Kunets; Gregory J. Salamo; W. Ted Masselink

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 681 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.12.039

✦ Synopsis

The influence of MBE growth conditions on the low frequency noise features of 1:8 mm thick layers of InSb is examined. Low Hooge factors down to 2 Â 10 À 5 , which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The temperature dependence of the Hooge factors could give further insight in the origins of flicker noise.