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Comparison of RHEED during MBE growth and the quality of AlGaAs:Si grown on (100) and misoriented GaAs substrates

✍ Scribed by H. Lee; N. Nouri; C. Colvard; D. Ackley

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 308 KB
Volume: 95
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(89)90404-1

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## Abstract The MBE growth of PbTe layers on GaAs (100) 2° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orient