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Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE

โœ Scribed by Y. Kadoya; A. Sato; H. Kano; H. Sakaki

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
367 KB
Volume
111
Category
Article
ISSN
0022-0248

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V/III Ratio Dependence of Polarity of Ga
V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE
โœ O. Takahashi; T. Nakayama; R. Souda; F. Hasegawa ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 103 KB ๐Ÿ‘ 2 views

In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was