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Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements

✍ Scribed by P. Gottwald; R. Riemenschneider; B. Szentpali; H.L. Hartnagel; Zs. Kincses; M. Ruszinko


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
422 KB
Volume
38
Category
Article
ISSN
0038-1101

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