Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

✍ Scribed by Murad, S.N.A.; Baine, P.T.; McNeill, D.W.; Mitchell, S.J.N.; Armstrong, B.M.; Modreanu, M.; Hughes, G.; Chellappan, R.K.

• Book ID: 118203156
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 638 KB
• Volume: 78
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2012.05.048