✦ LIBER ✦
Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
✍ Scribed by Lee, S.J.; Choi, C.H.; Kamath, A.; Clark, R.; Kwong, D.L.
- Book ID
- 118266093
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 300 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0741-3106
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