Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: its tradeoff with gate capacitance

✍ Scribed by Yang-Yu Fan; Qi Xiang; An, J.; Register, L.F.; Banerjee, S.K.

• Book ID: 114617010
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 497 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.809433