✦ LIBER ✦
Thickness and material dependence of capping layers on flatband voltage (VFB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications
✍ Scribed by Changhwan Choi
- Book ID
- 113797739
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 543 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0167-9317
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