Electronic and optical properties of sta
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Park, Seoung-Hwan ;Ahn, Doyeol ;Koo, Bun-Hei ;Kim, Jong-Wook
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Article
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2009
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John Wiley and Sons
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English
⚖ 350 KB
## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req