## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req
Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties
✍ Scribed by Kölper, Christopher ;Sabathil, Matthias ;Römer, Friedhard ;Mandl, Martin ;Strassburg, Martin ;Witzigmann, Bernd
- Book ID
- 112181088
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 989 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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