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Optical and Structural Properties of InGaN–AlGaN Ultraviolet Light-Emitting Diodes

✍ Scribed by Sang-Mook Kim; Jae Bum Kim; Junggeun Jhin; Jong Hyeob Baek; In Hwan Lee; Gun Young Jung

Book ID
119804163
Publisher
IEEE
Year
2008
Tongue
English
Weight
337 KB
Volume
20
Category
Article
ISSN
1041-1135

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req