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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

✍ Scribed by Chang, S.J.; Kuo, C.H.; Su, Y.K.; Wu, L.W.; Sheu, J.K.; Wen, T.C.; Lai, W.C.; Chen, J.R.; Tsai, J.M.

Book ID: 114569561
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 235 KB
Volume: 8
Category: Article
ISSN: 1077-260X
DOI: 10.1109/jstqe.2002.801677

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