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High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

✍ Scribed by Park, Seoung-Hwan; Ahn, Doyeol; Kim, Jong-Wook

Book ID
120366453
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
644 KB
Volume
94
Category
Article
ISSN
0003-6951

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req

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