𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Progress of InGaN Light Emitting Diodes on SiC

✍ Scribed by U. Strauss; H.-J. Lugauer; A. Weimar; J. Baur; G. Brüderl; D. Eisert; F. Kühn; U. Zehnder; V. Härle


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
72 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


InGaN Multiple-Quantum-Well Light Emitti
✍ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 89 KB 👁 2 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for

Electronic and optical properties of sta
✍ Park, Seoung-Hwan ;Ahn, Doyeol ;Koo, Bun-Hei ;Kim, Jong-Wook 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 350 KB

## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req

Greatly enhanced performance of InGaN/Ga
✍ Bai, J. ;Wang, Q. ;Wang, T. 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 390 KB

## Abstract For the first time we demonstrate InGaN/GaN‐based nanorod light emitting diodes (LEDs) with both very good current–voltage (__I__–__V__) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers commercially available using sel