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Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes

✍ Scribed by Vytautas Liuolia; Saulius Marcinkevičius; Qin Wang; Jan Andersson; Sang-Mook Kim; Jong Hyeob Baek

Book ID: 112182371
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 377 KB
Volume: 9
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201100571

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req