Evolution of buried compound layers form
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Alice E. White; Kenneth T. Short; Yong-Fen Hsieh; Robert Hull
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Article
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1992
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Elsevier Science
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English
β 1010 KB
The coalescence of buried silicide layers formed by high dose implantation in silicon and high temperature annealing occurs via a precipitate coarsening mechanism that is different in ( 100) and ( 111) silicon. The results of an extensive study of these phenomena are summarized and compared with the