Evolution of buried compound layers formed by ion implantation

✍ Scribed by Alice E. White; Kenneth T. Short; Yong-Fen Hsieh; Robert Hull

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 1010 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90268-e

✦ Synopsis

The coalescence of buried silicide layers formed by high dose implantation in silicon and high temperature annealing occurs via a precipitate coarsening mechanism that is different in ( 100) and ( 111) silicon. The results of an extensive study of these phenomena are summarized and compared with the formation of amorphous SiO 2 by implantation.