GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra
โฆ LIBER โฆ
Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3/Nb Films
โ Scribed by Zhuang Huizhao; Li Baoli; Wang Dexiao; Shen Jiabing; Zhang Shiying; Xue Chengshan
- Publisher
- Elsevier
- Year
- 2009
- Weight
- 362 KB
- Volume
- 38
- Category
- Article
- ISSN
- 1875-5372
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