Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence

Fabrication, morphology, and photolumine

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

✍ Zhaozhu Yang; Chengshan Xue; Huizhao Zhuang; Lixia Qin; Jinhua Chen; Hong Li; Do 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 821 KB

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra