Optical and electrical characterization
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Y. Lu; O. Buiu; S. Hall; P. K. Hurley
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Article
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2005
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Elsevier Science
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English
β 228 KB
The paper reports on electrical and optical investigations performed on HfO 2 high-k films deposited by Metalorganic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO 2 and the silicon substrate, which can be optically modelled